• +086 0755 86329196
  • msun@radiumcorp.com
产品与服务 > 锁相环芯片
RF-NMOS ICs

RF Power N-Channel MOSFET witd high output power, high transfer gain, and high efficiency. the most power gain is 18dBm witd power transfer efficiency 75%, tde working frequency is up to 2.4G.